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Updated: May 21, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Leveraging Dual Resistive Switching in Quasi-2D Perovskite Memristors for Integrated Non-volatile Memory, Synaptic
Zhenwang Luo1, Weisheng Wang1, Junhui Wu1
1Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China.
Abstract:
The increasing computational demands of artificial intelligence (AI) algorithms are exceeding the capabilities of conventional computing architectures, creating a strong need for novel materials and paradigms. Memristors that integrate diverse resistive switching (RS) behaviors provide a promising avenue for developing novel computing architectures. In this study, we achieve the coexistence of volatile and nonvolatile RS behaviors in quasi-2D perovskite memristor (Q-2DPM). The Q-2DPM exhibits competitive performance as a nonvolatile memory. Multiple synaptic functions have been successfully simulated on Q-2DPM, such as excitatory postsynaptic currents, paired-pulse facilitation, and long-term potentiation/depression. Furthermore, artificial neural networks using Q-2DPM synapses achieve high accuracy in MNIST image classification tasks. The Q-2DPM's inherent characteristics suitable for reservoir computing are also demonstrated through its application in a pulse-stream-based digital classification experiment, showcasing its impressive performance. The elucidation of the dual RS mechanisms within Q-2DPM provides fresh insights into memristor RS behavior and underscores the potential of achieving diverse computational units through a single device. This work paves the way for the implementation of physical neuromorphic hardware architectures and the advancement of sophisticated computational primitives, offering a significant step toward the next generation of computing technologies.
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