Resistively detected electron spin resonance andg-factor in few-layer exfoliated MoS₂devices

MoS₂has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of theg-factor of MoS₂depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to determine theg-factor in micron-scale devices. However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS₂. Here, we exploit naturallyn-doped few-layer MoS₂devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS₂devices. Using RD-ESR, we determine theg-factor of few-layer MoS₂to be ∼1.92 and observe that theg-factor value is independent of the charge carrier density within the limits of our measurements.