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The Hall Effect01:30

The Hall Effect

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Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
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Related Experiment Video

Updated: May 21, 2025

Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
12:22

Optimization, Test and Diagnostics of Miniaturized Hall Thrusters

Published on: February 16, 2019

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Advancing precision in Hall effect through localized heating with a compact design.

Dinesh Kumar Kedia1, Navita Jakhar1, Surjeet Singh1

  • 1Department of Physics, Indian Institute of Science Education and Research, Dr Homi Bhabha Road, Pune 411008, India.

The Review of Scientific Instruments
|March 21, 2025
PubMed
Summary

A new automated Hall measurement setup offers precise temperature control up to 750 K and high sensitivity for diverse materials. This versatile system enables reliable characterization of semiconductors and thermoelectrics for advanced material research.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Accurate characterization of charge carrier properties is crucial for developing advanced materials.
  • Existing Hall measurement systems may have limitations in temperature range, sensitivity, or sample versatility.

Purpose of the Study:

  • To develop and validate a versatile, fully automated Hall measurement setup.
  • To achieve precise temperature control and high sensitivity across a wide range of materials and operating conditions.

Main Methods:

  • A compact, automated sample holder with localized heating and minimal heat loss for stable temperatures up to 750 K.
  • Phase-sensitive lock-in detection and electromagnetic shielding for nanovolt Hall signal measurements.
  • Adjustable pressure-point contacts within a controlled atmosphere quartz tube for diverse sample geometries.

Main Results:

  • The setup operates reliably between room temperature and 750 K in magnetic fields up to ±10 kOe with temperature stability better than ±10 mK.
  • Achieved high sensitivity enabling measurements on samples with carrier concentrations ranging from 10^14 cm^-3 to 10^21 cm^-3.
  • Successfully characterized diverse materials including germanium, half-Heusler semiconductors, and superionic thermoelectrics.

Conclusions:

  • The developed Hall measurement setup is versatile, reliable, and offers high performance for a broad spectrum of materials.
  • The system's precision and automation facilitate efficient and accurate characterization of thermoelectric and semiconductor properties.
  • The results demonstrate good agreement with commercial systems, validating the setup's capabilities.