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Updated: May 21, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Phelecia Scotland1,2, Lucas Eddy2,3, Jinhang Chen2
1Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, United States.
This study introduces a modified flash Joule heating method to create heteroatom-doped graphene with high substitution levels. The resulting nitrogen-doped graphene enhances battery anode performance and stability.
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