Related Experiment Video
Updated: May 20, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Unveiling Anomalous Ultrafast Carrier Dynamics of Strong Spectral Overlapping in Few-Layer MoS2
Zengyue Wang1,2, Ning Wang1, Lihe Yan1,3
1Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Abstract:
Molybdenum disulfide (MoS2) nanosheets exhibit significant applications in photoelectric devices, and correctly revealing the photogenerated carrier dynamics in the material is crucial for understanding its photophysical response mechanism and optimizing the photoelectric response efficiency of the devices. Herein, we study the ultrafast photogenerated carrier dynamics in MoS2 nanosheets using femtosecond time-resolved transient absorption (TA) microscopy and find that the anomalous rebleaching phenomenon of the TA signals for A- and B-excitons takes place at high pump fluences. By performing a careful quantitative fitting of the time-resolved TA signals, we ascribe the anomalous rebleaching to a result of the superposition of photobleaching and photoinduced absorption induced by the bandgap renormalization effect. This work provides new perspectives for elucidating and comprehending the ultrafast carrier dynamics from the complex TA signals, especially when there is an overlap between positive and negative signals.
More Related Videos
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
10:41Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
Published on: December 20, 2016
Related Concept Videos
¹H NMR: Interpreting Distorted and Overlapping Signals
As Δν decreases and the signals move closer, the doublets appear increasingly distorted. The intensities of the inner lines increase at the cost of those of the outer lines as the signals are...
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
The de Broglie Wavelength
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
¹³C NMR: ¹H–¹³C Decoupling
A broadband decoupling technique is used to simplify these complex, sometimes overlapping, signals. Broadband decoupling relies on a...