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Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity
Miao-Ling Lin1,2, Jiang-Bin Wu1,2, Xue-Lu Liu1
1Institute of Semiconductors, State Key Laboratory of Semiconductor Physics and Chip Technologies, Chinese Academy of Sciences, Beijing 100083, China.
Abstract:
We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength, and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the impact of spatial coherence of photon and phonon fields on phonon excitation via photon or phonon cavity engineering.
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