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Efficient phosphorus doping strategy to overcome lattice distortion in Mn-based cathodes for advanced potassium-ion
Zhenxiang Wang1, Zhiwang Liu1, Hongyan Li1
1Department of Materials Science and Engineering, College of Chemistry and Materials Science, Jinan University, Guangzhou 510632, PR China.
Abstract:
Manganese-based metal oxides have emerged as promising cathode materials for potassium-ion batteries (PIBs) due to favourable structural characteristics, such as large interlayer spacing and long diffusion paths for K+ ions. However, there are challenges due to the Jahn-Teller effect of the Mn3+ and the large volumetric strains of the charge/discharge process. In this study, the unfavorable lattice strains as well as the electrochemical properties were improved by phosphorus doped potassium manganate strategy. P-doped increases the K+ storage active sites by increasing the Mn3+ content to enhance the storage capacity. In addition, the PO4 and MnO6 octahedra share O to stabilize the lattice and suppress the Jahn-Teller effect as well as the bulk strain induced by K+ insertion/extraction. The reduced charge transfer resistance as well as the enlarged layer spacing help to reduce the K+ diffusion barrier, fast K+ diffusion kinetics, and improve the rate performance. K0.6MnP0.02O2 (P-KMnO-2) has capacity of 50.97 mAh g-1 at 1000 mA g-1. And after 500 cycles at 500 mA g-1, P-KMnO-2 still has capacity of 41 mAh g-1. In addition, maximum energy density of full cell composed of P-KMnO-2 and soft carbon reached 176.4 Wh kg-1.
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