Capacitor With A Dielectric
Dielectric Polarization in a Capacitor
Ferromagnetism
Integrator and Differentiator
Biasing of FET
MOS Capacitor
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Updated: Apr 11, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Guangdi Feng1,2, Xiaoming Zhao1, Xiaoyue Huang1
1Key Laboratory of Polar Materials and Device, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
We developed in-memory differential computation using ferroelectric domain reversal. This novel approach efficiently extracts differences directly in memory, reducing data transmission and energy use for edge computing applications.
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