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Updated: May 26, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular
Hyeong Pil Kim1, Maria Vasilopoulou2, Habib Ullah3
1Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701, South Korea.
Abstract:
Expression of concern for 'A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation' by Hyeong Pil Kim et al., Nanoscale, 2020, 12, 7641-7650, https://doi.org/10.1039/C9NR10745B.
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