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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Phase-Composite InO Semiconductors for High-Performance Flexible Thin-Film Transistors.

Quang Khanh Nguyen1, Giang Hoang Pham1, Thi Thu Huong Chu2

  • 1Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea.

ACS Applied Materials & Interfaces
|April 3, 2025
PubMed
Summary

We developed amorphous/nanocrystal composite indium oxide films using atomic layer deposition for advanced thin-film transistors (TFTs). These films show enhanced electron mobility and stability, overcoming key limitations in indium oxide TFTs.

Keywords:
amorphous−crystalline phase-compositehigh-mobility semiconductorhigh-pressure atomic layer depositionindium oxidethin-film transistors.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Indium oxide (InO) is a promising material for thin-film transistors (TFTs) due to its high electron mobility and optical transparency.
  • However, its application is hindered by high carrier concentration, poor crystallization control, and instability.
  • Developing advanced fabrication methods is crucial for overcoming these limitations.

Purpose of the Study:

  • To fabricate amorphous/nanocrystal phase-composite indium oxide (InO) films using high-pressure atomic layer deposition (ALD).
  • To investigate the effect of deposition temperature and channel thickness on film properties and device performance.
  • To address limitations in carrier concentration, phase control, and mechanical durability for next-generation TFTs.

Main Methods:

  • Fabrication of InO films via high-pressure atomic layer deposition (ALD) using InCA-1 precursor and H2O2 oxidant.
  • Systematic variation of deposition temperature and channel thickness to control film structure and carrier concentration.
  • Characterization of film properties, including electrical performance, optical transmittance, surface morphology, mechanical flexibility, and environmental stability.

Main Results:

  • Achieved amorphous/nanocrystal phase-composite InO films with controlled carrier concentration and enhanced electron transport via resonant hybridization.
  • Optimized films (110 °C, 7.0 nm thick) demonstrated high field-effect mobility (61.1 cm2 V-1 s-1), on/off ratio (0.9 × 10^6), and low subthreshold swing (0.45 V dec-1).
  • Exhibited excellent reproducibility, optical transmittance (>87%), mechanical flexibility (10,000 bending cycles), and environmental stability (60 days).

Conclusions:

  • The developed phase-composite InO films overcome critical limitations of conventional InO-based TFTs.
  • ALD enables precise control over phase composition, carrier concentration, and film thickness.
  • These findings pave the way for advanced, durable, and high-performance electronic and optoelectronic devices.