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Updated: Jun 16, 2025

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

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Published on: December 4, 2014

Area-Selective Atomic Layer Deposition on Homogeneous Substrate for Next-Generation Electronic Devices.

Min-Jeong Rhee¹, Byoungjun Won¹, Young-Jin Lim¹

¹Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|April 3, 2025

Summary

This study introduces area-selective atomic layer deposition (AS-ALD) on homogeneous surfaces. Selective fluorination of zirconium dioxide grain boundaries enables controlled aluminum oxide growth, enhancing dielectric properties.

Keywords:

area‐selective atomic layer deposition dielectric grain boundary homogeneous surface leakage currents

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Last Updated: Jun 16, 2025

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

Area of Science:

Materials Science
Surface Chemistry
Nanotechnology

Background:

Area-selective atomic layer deposition (AS-ALD) traditionally relies on heterogeneous surfaces.
Controlling deposition on homogeneous surfaces presents a significant challenge in materials engineering.

Purpose of the Study:

To develop a novel AS-ALD approach for homogeneous surfaces.
To demonstrate selective growth of aluminum oxide (Al2O3) on zirconium dioxide (ZrO2) grain boundaries.

Main Methods:

Selective surface fluorination of ZrO2 using sulfur hexafluoride (SF6).
Surface passivation using a cyclopentadienyl ligand to block hydroxyl-terminated areas.
Density functional theory and Monte Carlo simulations for theoretical validation.
Transmission electron microscopy for elemental mapping and growth observation.

Main Results:

Fluorination of ZrO2 grain boundaries created F-terminated surfaces.
Selective passivation of hydroxyl-terminated ZrO2 prevented precursor adsorption.
Demonstrated selective Al2O3 growth along ZrO2 grain boundaries.
Achieved a 15.5% increase in dielectric constant in ZrO2/Al2O3/ZrO2 stacks without increased leakage.

Conclusions:

Established a new method for AS-ALD on homogeneous surfaces.
GB-selective Al2O3 incorporation effectively passivates leakage paths.
This approach offers potential for next-generation electronic devices.