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Imaging p-n Junctions Using Operando Photoemission Electron Microscopy.

Elizaveta Pyatenko¹, Shunsuke Nozawa¹, Keiki Fukumoto¹

¹Institute of Materials Structure Science (IMSS), High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan.

|April 9, 2025

Summary

This summary is machine-generated.

We developed a new operando photoemission electron microscopy (PEEM) method to visualize p-n junction band alignment and depletion layers in real-time. This technique reveals electronic structure changes crucial for semiconductor device optimization.

Keywords:

electronic structure operando photoemission electron spectroscopy p−n junction semiconductors

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Area of Science:

Materials Science
Condensed Matter Physics
Semiconductor Physics

Background:

Understanding p-n junction behavior under bias is critical for semiconductor device performance.
Direct visualization of electronic structure modifications at interfaces remains challenging.

Purpose of the Study:

To develop and demonstrate a novel method for visualizing p-n junction band alignment and depletion layer dynamics.
To investigate the electronic structure of a GaAs backward tunnel diode under various bias conditions.

Main Methods:

Utilized operando photoemission electron microscopy (PEEM) to directly observe the cross-section of a p-n interface.
Applied forward and reverse bias to a GaAs backward tunnel diode during PEEM measurements.

Main Results:

Successfully visualized external voltage-dependent energy band alignment.
Observed spectral signatures in the n-type region, providing evidence of electron tunneling under reverse bias.
Directly visualized the depletion layer and its widening with increasing reverse bias.

Conclusions:

The developed PEEM method enables direct visualization of p-n junction modifications during device operation.
This technique offers a powerful tool for understanding semiconductor interfaces and improving device efficiency.
The method is broadly applicable to various semiconductor materials.