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Updated: May 15, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Berry Curvature-Driven Valley Nernst Effect in Monolayer WSe2
Jae Won Choi1, Won-Yong Lee1, Takashi Kikkawa2
1Department of Physics, Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea.
Abstract:
The Berry curvature in a Dirac cone causes anomalous transport phenomena, including anomalous Hall, anomalous Nernst, and Valley Hall effects. Detecting the Berry curvature in a 2D transition metal dichalcogenide (TMD) layer requires breaking time-reversal symmetry to create a population imbalance between the K+ and K- valleys. Direct observation and control of valley polarization in a 2D TMD layer remain challenging, especially for practical applications. Here, we present the first experimental verification of the Berry curvature-driven valley Nernst effect (VNE) in interlayer TMDs, focusing on the monolayer (ML) WSe2 in a Pt/YIG bilayer structure. Experiments and calculations show that our VNE signals result from the high Berry curvature of the ML WSe2 layer. This opens up a new way to generate spin- and valley-current-based thermoelectric devices.
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