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Related Experiment Video

Updated: May 14, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling.

Christian Lafforgue¹, Boris Zabelich^1,2, Camille-Sophie Brès¹

¹Ecole Polytechnique Fédérale de Lausanne, Photonic Systems Laboratory (PHOSL), CH-1015 Lausanne, Switzerland.

Communications Physics

|April 11, 2025

Summary

This summary is machine-generated.

Silicon nitride shows electro-optic (EO) modulation via optically-assisted poling, bypassing high temperatures. This enables compact, on-chip EO modulators for integrated optical signal processing.

Keywords:

Integrated optics Nonlinear optics Optoelectronic devices and components

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Area of Science:

Photonics and Materials Science
Integrated Optics

Background:

Silicon nitride is a promising material for on-chip integrated photonics.
Achieving a linear electro-optic (EO) effect in silicon nitride has been challenging due to its intrinsic properties.
Recent work shows a linear EO effect can be induced by charge carrier displacement under high electric fields.

Purpose of the Study:

To develop a low-temperature method for enabling linear electro-optic modulation in silicon nitride.
To demonstrate optically-assisted poling of silicon nitride microring resonators.
To characterize the performance of the resulting silicon nitride EO modulators.

Main Methods:

Optically-assisted poling of a silicon nitride microring resonator at room temperature.
Optimization of the optical poling process to induce second-order nonlinearity.
Measurement of the effective second-order nonlinearity and high-speed EO response.

Main Results:

Successful implementation of optically-assisted poling, avoiding high-temperature processing.
Experimental achievement of a long-term effective second-order nonlinearity of 1.218 pm/V.
Demonstration of a high-speed EO modulator with a 4 GHz bandwidth.

Conclusions:

Optically-assisted poling is an effective technique for realizing linear EO modulation in silicon nitride.
This method enables the development of compact, monolithic silicon nitride EO modulators.
The results pave the way for advanced integrated optical signal processing.