The Effect of Al₂O₃ Nanoparticles on Hexagonal Boron Nitride Films Resulting from High-Temperature Annealing

A simple two-step approach was proposed to obtain hBN thin films with high crystalline quality, meaning that the films were initially prepared by using an RF magnetron sputtering technique and subsequently followed by a post-annealing process at a high temperature. In the case of introducing Al₂O₃ nanoparticles, the effects of annealing temperature from 1000 °C to 1300 °C and annealing time from 0.5 h to 1.5 h on the recrystallization process of the grown hBN films were systematically studied by using XRD and SEM technologies. The introduction of Al₂O₃ impurities during the annealing process successfully reduced the transition temperature of hexagonal phase BN by more than 300 °C. The crystalline quality of hBN films grown by RF magnetron sputtering could be effectively enhanced under annealing at 1100 °C for 1 h. The DUV detectors were prepared using the hBN films before and after annealing, and showed a notable improvement in detector performance by using annealed films. It has significant application value in further enhancing the performance of DUV photodetectors based on high-quality hBN films.