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Updated: May 14, 2025

Optimized Setup and Protocol for Magnetic Domain Imaging with In Situ Hysteresis Measurement
Published on: November 7, 2017
Enhanced electromechanical response in Dy3+-doped PNN-PZT relaxor ferroelectrics
Yue Qin1, Wenbin Liu1, Yi Ding1
1College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610064, China. zhengtingscu@126.com.
Abstract:
Ferroelectric ceramics with both high piezoelectric coefficients and a wide operational temperature range are in high demand for advanced electromechanical applications. However, since these properties are often mutually exclusive, achieving both exceptional performance and robust thermal stability remains a significant challenge. Here, we report achieving high piezoelectricity (d33 = 840 pC N-1, kp = 0.73, TC = 180 °C) and excellent temperature stability ( less than 10% within 20-160 °C) in 0.39Pb(Ni1/3Nb2/3)O3-0.59Pb(Zr0.356Ti0.644)O3-0.02Pb(Mg1/2W2/3)O3 ceramics doped with 0.2 wt% Dy2O3, outperforming those of other typical piezoceramics. Rayleigh analysis, domain writing of PFM, and calculation of the activation energy of domain wall motion reveal that high piezoelectric properties result from enhanced internal contribution and easier domain wall motion. Excellent temperature stability is mainly attributed to the stable domain structure. This work provides a promising direction for the development of piezoelectric materials with both high piezoelectric performance and good temperature stability.
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