Mitigating Surface Energy and Core-Shell Interface Strain of Yb3+-Doped ZnSe-Based Quantum Dots for Pure-Blue
Zhenyu Hu1,2, Song Yang1,2, Li Zheng1,2
1College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108, China.
None:
Large ZnSe quantum dots (QDs) with an emission peak ≈450 nm hold significant promise for display technologies. However, achieving efficient pure-blue emission through the enlargement of ZnSe nanocrystals remains a significant challenge. In this study, a breakthrough is reported in growing large-size ZnSe QDs well beyond the exciton Bohr radius through Yb3+ doping strategy. Yb3+ doping reduces the surface energy of the ZnSe (220) crystal plane and alleviates interface strain in the ZnSe/ZnS structure, enabling the QDs to grow larger while maintaining enhanced crystal stability. The resulting Yb: ZnSe/ZnS QDs exhibit pure-blue emission at 453 nm, with a full width at half maximum (FWHM) of 46 nm and a high photoluminescence quantum yield (PLQY) of 67.5%. When integrated into quantum dot light-emitting diodes (QLEDs), the devices display electroluminescence (EL) at 455 nm, with an external quantum efficiency (EQE) of 1.35%, and a maximum luminance of 1337.08 cd m-2.
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