Mitigating Surface Energy and Core-Shell Interface Strain of Yb3+-Doped ZnSe-Based Quantum Dots for Pure-Blue

Zhenyu Hu1,2, Song Yang1,2, Li Zheng1,2

  • 1College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108, China.

Abstract

Related Concept Videos

Elastic Strain Energy for Shearing Stresses01:20

Elastic Strain Energy for Shearing Stresses

As discussed in previous lessons, strain energy in a material is the energy stored when it is elastically deformed, a concept crucial in materials science and mechanical engineering. This energy results from the internal work done against the cohesive forces within the material. When a material undergoes shearing stress and corresponding shearing strain, the strain energy density, which is the energy stored per unit volume, is calculated. Within the elastic limit, where the stress is...
137
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.0K
Yield Criteria for Ductile Materials under Plane Stress01:25

Yield Criteria for Ductile Materials under Plane Stress

In designing structural elements and machine parts using ductile materials, it is crucial to ensure that these components withstand applied stresses without yielding. Yielding is initially determined through a tensile test, which evaluates the material's response to uniaxial stress. However, tensile stress is insufficient when components face biaxial or plane stress conditions This condition requires advanced criteria to predict failure.
The Maximum Shearing Stress Criterion, also known as...
126
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
176
Elastic Strain Energy for Normal Stresses01:22

Elastic Strain Energy for Normal Stresses

Strain energy quantifies the energy stored within a material due to deformation under loading conditions, a fundamental concept in materials science and engineering. The strain energy can be modeled when a material is subjected to axial loading with uniformly distributed stress. In this scenario, the stress experienced by the material is the internal force divided by the cross-sectional area, and the strain induced is directly proportional to this stress through the modulus of elasticity.
If...
120
Residual Stresses in Bending01:18

Residual Stresses in Bending

In the study of elastoplastic members subjected to bending moments, understanding the loading and unloading phases is crucial for assessing material behavior and structural integrity. During the loading phase, as the bending moment increases, the material initially responds elastically, adhering to Hooke's Law, where stress is directly proportional to strain. When the load exceeds the yield strength, plastic deformation occurs, resulting in permanent strain and deformation that remains even...
140