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Updated: May 13, 2025
09:41
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
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Ferroelectric HfO2-ZrO2 Multilayers with Reduced Wake-Up.
Barnik Mandal1,2, Adrian-Marie Philippe3, Nathalie Valle3
1Smart Materials Unit, Luxembourg Institute of Science and Technology (LIST), 41 Rue de Brill, L-4422 Belvaux, Luxembourg.
ACS Omega
|April 14, 2025
Summary
This study demonstrates ferroelectricity in the thickest HfO2-ZrO2 multilayer film yet. Multilayering stabilizes ferroelectric properties and accelerates wake-up behavior in hafnia-based films.
Area of Science:
- Materials Science
- Solid-State Physics
- Thin Film Technology
Background:
- Ferroelectricity in hafnium oxide (HfO2) has spurred research into doped and solid-solution films.
- Multilayering offers potential for tuning functional properties but remains underexplored in HfO2-ZrO2 systems.
Purpose of the Study:
- To investigate ferroelectricity in solution-processed HfO2-ZrO2 multilayer thin films.
- To establish a thicker multilayer ferroelectric film and explore its properties.
Main Methods:
- Fabrication of a 50 nm-thick HfO2-ZrO2 multilayer film using a solution-processing technique.
- Structural characterization via transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy.
- Electrical characterization to assess ferroelectric properties and wake-up behavior.
Main Results:
- Demonstration of ferroelectricity in the thickest HfO2-ZrO2 multilayer film (50 nm) to date.
- TEM confirmed multilayer structure with grain continuity, indicating stabilization of polar phase in ZrO2 by HfO2.
- Achieved remanent polarization of 9 μC cm⁻², with accelerated wake-up behavior due to enhanced breakdown strength from interfaces.
Conclusions:
- Multilayer HfO2-ZrO2 films can exhibit robust ferroelectric properties.
- The multilayer architecture facilitates stabilization of ferroelectricity and offers a pathway for faster wake-up in thick ferroelectric films.
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