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Updated: May 13, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Probing into Intraband Transitions Enabled Charge Carrier Dynamics of THz Response Generated in Graphene/MoS2
Saloni Sharma1,2,3, Divyansh Pratap Singh1, Shreeya Rane4
1Photonic Materials Metrology Sub Division, Advanced Materials and Device Metrology Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, 110012, India.
Abstract:
The engineering of terahertz phonons is challenging due to difficulties in achieving sub-nanometer material precision and in facilitating efficient phonon coupling at terahertz frequencies region. The effective generation, detection, and manipulation of terahertz phonons via the integration of atomically thin layers in van der Waals heterostructures can enable new designs for next-generation optoelectronic quantum devices, offering new avenues for thermal engineering in the terahertz regime. Here, optical pump terahertz probe and terahertz time-domain experiments are used to reveal the behavior of charge carrier transfer in real time at heterostructure interfaces of single-layer graphene and monolayer MoS2 upon photoexcitation and plausible mechanism has been put forward. Moreover, a temperature-dependent terahertz response of GM heterostructure along with experimental observation is explored in detail with considered appropriate theoretical models. These insights can prove valuable for designing the next generation of optoelectronic applications with stacked 2D heterostructures within the terahertz bandwidth.
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