High-performance GaN-based green resonant cavity-light emitting diodes with an Ag bottom mirror

Green resonant cavity light-emitting diodes (RCLEDs) are important components in optical communication and display applications. However, the light output power (LOP) is usually limited. In this study, GaN-based green RCLEDs with a large chip size (900 × 900 μm²) have been fabricated using a silver (Ag) metal mirror as the bottom reflector and a dielectric distributed Bragg reflector (DBR) as the top reflector. The device is characterized by a small spectral linewidth (3.0 nm) and divergence angle (95°) when compared with standard LEDs, which is attributed to the cavity effect. The turn-on voltage is 2.3 V at an injection current of 20 mA, with a LOP of 180 mW at a current density of 197 A/cm², which is the highest LOP reported to date for green RCLEDs. The Ag bottom mirror can not only enhance the cavity effect but also improve heat dissipation and electrical injection. The utilization of array configuration for the n-side electrode has not only enabled uniform current injection but has also maximized the light output area that contributes to the high LOP.