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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Modulation of Nanowire Emitter Arrays Using Micro-LED Technology.

Zhongyi Xia1, Dimitars Jevtics1, Benoit Jack Eloi Guilhabert1

  • 1Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow G1 1RD Scotland, U.K.

ACS Nano
|April 17, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed a scalable platform using micro-light-emitting diodes (micro-LEDs) on CMOS arrays to individually control nanowire emitters. This breakthrough enables parallel operation for future large-scale photonic integrated circuits.

Keywords:
NanophotonicsNanowiresTransfer-Printingmicro-LEDs

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Area of Science:

  • Nanophotonics
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Scalable and efficient excitation of nanophotonic emitters is crucial for advanced integrated photonic circuits.
  • Current methods often lack the precision and scalability required for complex systems.

Purpose of the Study:

  • To present a novel, scalable excitation platform for nanophotonic emitters.
  • To demonstrate precise, individually addressable control of infrared emitters integrated into optical waveguides.

Main Methods:

  • Heterogeneous integration of semiconductor nanowires onto micro-light-emitting diode (micro-LED) on CMOS arrays using transfer printing.
  • Deterministic assembly of emitters within polymer optical waveguides.
  • Optical pumping and modulation measurements of the integrated emitters.

Main Results:

  • High yield and positional accuracy in assembling waveguide-coupled nanowire infrared emitters.
  • Demonstrated direct optical pumping of emitters using micro-LED pixels.
  • Achieved optical modulation (on-off keying) up to 150 MHz.
  • Showcased individual control of multiple emitters in parallel using a micro-LED-on-CMOS array.

Conclusions:

  • The developed micro-LED-on-CMOS platform offers a scalable solution for addressing nanophotonic emitters.
  • This technology paves the way for large-scale, parallel-controlled photonic integrated circuits.
  • Enables precise optical control and modulation of integrated infrared emitters.