Toward Graphene Field-Effect Transistor Array with Uniform Sensing Characteristics via a Clean Graphene Transfer...

Area of Science:

• Materials Science
• Nanotechnology
• Surface Chemistry

Background:

• Large-scale synthesis of uniform, low-defect graphene on copper foil is advancing.
• Clean transfer of graphene to device substrates remains a significant challenge for practical applications.

Purpose of the Study:

• To develop and demonstrate a clean graphene transfer method using a lift-off resist (LOR) photoresist.
• To evaluate the surface cleanliness and device performance of graphene transferred with the LOR method.

Main Methods:

• Utilized a lift-off resist (LOR) photoresist as a transfer-supporting layer for graphene.
• Assessed graphene surface cleanliness using optical microscopy, atomic force microscopy, and Raman spectroscopy.
• Fabricated and tested high-throughput graphene field-effect transistors (GFETs) to evaluate sensing characteristics.

Main Results:

• Achieved a truly clean transfer of graphene, free from amorphous carbon residues like poly(methyl methacrylate).
• Surface analysis confirmed the high quality and uniformity of the transferred graphene.
• Demonstrated uniform sensing characteristics in GFETs fabricated with the cleanly transferred graphene.

Conclusions:

• The LOR photoresist method offers a novel and effective route for clean graphene transfer.
• This technique addresses a critical bottleneck in the industrial application of graphene.
• The clean transfer facilitates the development of high-performance graphene-based electronic devices.