Related Experiment Video
Updated: May 10, 2025

Photoelectron Imaging of Anions Illustrated by 310 Nm Detachment of F−
Published on: July 27, 2018
S-Vacancy-Induced "Proton Fence Effect" Enables Selectivity Switching between CH4 and CO in Photo-Assisted CO2
Shengqi Liu1, Zhenyan Guo1, Zhengyi Li1
1State Key Laboratory of Green Pesticide, Key Laboratory of Green Pesticide & Agricultural Bioengineering, Ministry of Education, State-Local Joint Laboratory for Comprehensive Utilization of Biomass, Center for R&D of Fine Chemicals, Guizhou University, Guiyang, 550025, China.
Abstract:
Upcycling CO2 into high-value C1 products is impressive for achieving carbon neutrality and energy sustainability, while rational modulation of C1 product selectivity is one of the biggest challenges in electrocatalytic CO2 reduction reaction (eCO2RR) due to the competing reaction pathways and thermodynamic limitation. Here, we showcase a "proton fence" strategy enabled by in situ adsorbed *OH on sulfur vacancies (SV) to ultraselectively switch the C1 product between CH4 and CO during CO2RR, with Faraday efficiency of 93.6% and 95.3%, respectively. In situ measurements uncover that the photo-generated holes counteract Cu2+ electroreduction to retain the intact structure of CuInS2/CuS, while *OH dissociated from water can spontaneously anchor toward SV to hinder the local proton migration, completely circumventing multiproton products. Meanwhile, the preferential desorption of *CO from Cu centers adjacent to the *OH-anchored SV renders the exclusive formation of CO. In the absence of SV, *CO can be further hydrogenated in a lower free energy/even spontaneously to afford CH4. The proposed proton confinement effect furnishes a promising reference for the selectivity control of eCO2RR, and the photo-assisted electroreductive protocol demonstrates a paradigm of in situ stabilization of electron-intolerant catalytic structures.
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

