Related Experiment Video
Updated: May 12, 2025

07:00
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
7.1K
Nitrogen-Functionalized p-Type Graphene Window and Silicon Nanowire Heterostructure with High-Performing NIR Light
Dipayan Roy1, S Najes Riaz1, Anibrata Banerjee1
1School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032, India.
ACS Applied Materials & Interfaces
|April 24, 2025
Summary
Nitrogen/oxygen functionalized reduced graphene oxide (NORG) with enhanced defects shows improved near-infrared (NIR) detection. NORG-30/Silicon nanowire devices achieve high responsivity and detectivity, demonstrating potential for alcohol sensing in the food industry.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Reduced graphene oxide (rGO) is explored for optoelectronic applications.
- Doping, strain, and defects in rGO influence its electronic properties.
- Near-infrared (NIR) light detection requires materials with specific band alignments and charge carrier properties.
Purpose of the Study:
- To investigate structural effects, defects, and vacancies in nitrogen/oxygen functionalized reduced graphene oxide (NORG).
- To enhance the p-type behavior of NORG for improved photodetector performance.
- To develop NORG/Silicon nanowire (SiNW) hybrid photodetectors for NIR detection and alcohol sensing.
Main Methods:
- Synthesis of NORG from pyrazole at varying intervals (NORG-6/30).
- Combined spectroscopic analysis and ab initio calculations to understand structural properties.
- Fabrication and characterization of NORG-30/SiNW photodetector devices.
- Temperature-dependent modeling (Thermionic and Cheung's models) and Ultraviolet Photoelectron Spectroscopy (UPS) analysis.
Main Results:
- NORG-30 exhibits maximum in-plane hopping defects and vacancies, enhancing p-type behavior.
- NORG-30/SiNW devices show high NIR responsivity (50 mA/W) and detectivity (2.2 × 10^11 Jones) at -2 V.
- Schottky barrier height of 0.98 eV and diode ideality factor of 2.92 were determined.
- Photocurrent in NORG-30/SiNW is significantly higher than other NORG/SiNW and rGO/SiNW devices.
Conclusions:
- Structural modifications, specifically defects and vacancies in NORG-30, optimize its electronic properties for NIR detection.
- The NORG-30/SiNW hybrid structure demonstrates excellent performance as a NIR photodetector.
- The developed device shows potential for rapid alcohol quantification in the food industry.

