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Updated: May 1, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Broadband-Detection and Low-Operating-Voltage Photodetectors Based on Metal Oxide/Perovskite Quantum Dot
Abstract:
To achieve comprehensive environmental monitoring, photodetectors with broad operational wavelength range are crucial for capturing realistic wide-spectrum signals and supporting integrated system operations. This study presents a high-performance photodetector based on InSrO nanofiber (NF)/CsPbBr3 quantum dot (QD) heterojunctions, achieving broadband detection (230-500 nm) and ultralow operating voltage (0.05 V). By synergistically combining the UV absorption of InSrO NFs with the visible-light sensitivity of CsPbBr3 QDs, the device exhibits a responsivity of 6.88 A·W-1 and a detectivity of 6.39 × 1014 Jones. Systematic analysis reveals that the heterointerface facilitates efficient charge separation, while the 1D nanofiber architecture enhances directional carrier transport. Notably, the photodetectors can retain 95% of the initial photocurrent after 15 days, demonstrating exceptional stability. This work can advance the development of energy-efficient optoelectronic devices for environmental monitoring and optical communications applications.
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