Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices

This article reviews the properties and formation process of interface traps in MOS and linear bipolar devices. Transistors are the core components of modern electronic devices, and their performance and reliability directly affect the performance of the entire system. In radiation environments, the emergence and evolution of interface traps severely impacts the functionality of transistors, being a significant factor in device failure. However, our understanding of the properties and formation processes of interface traps is still limited. Therefore, research on interface traps is of great theoretical and practical significance. This paper focuses on studying the radiation response patterns of transistor interface traps. By reviewing relevant literature and research findings from both domestic and international sources, this review provides a detailed overview of the current state of research on the transformation of interface traps and the annealing processes that occur during the irradiation of microelectronic devices. Finally, based on this foundation, this paper discusses the current state of simulation research methods for interface traps. Through an in-depth exploration of the formation mechanisms of interface traps and their role in transistor performance, this study aims to provide guidance for device design, radiation hardening, and reliability assessment, and ensure the reliability and stability of devices in radiation environments.