1.3 Micron Photodetectors Enabled by the SPARK Effect

Area of Science:

• Optoelectronics
• Materials Science
• Nanotechnology

Background:

• Graphene photodetectors are crucial for optical communication.
• The SPARK effect has been previously studied mainly at 1550 nm.
• Hybrid waveguide structures offer enhanced device performance.

Purpose of the Study:

• To present a graphene-based photodetector operating at 1310 nm.
• To investigate the SPARK effect at 1310 nm.
• To analyze the wavelength dependence of the SPARK effect.

Main Methods:

• Fabrication of a hybrid waveguide photodetector using hydrogenated amorphous silicon, graphene, and crystalline silicon.
• Characterization of the photodetector's responsivity and noise-equivalent power at 1310 nm.
• Determination and analysis of the efficiency × lifetime product of carriers.

Main Results:

• A peak responsivity of 0.3 A/W and a noise-equivalent power of 0.4 pW/Hz^1/2 were achieved at 1310 nm.
• The efficiency × lifetime product of carriers at 1310 nm was determined and compared to 1550 nm values.
• Enhanced responsivity at reduced incident optical power was observed.

Conclusions:

• The developed photodetector demonstrates effective operation at 1310 nm, expanding the application of the SPARK effect.
• The study provides insights into the wavelength dependence of the SPARK effect.
• The silicon-based fabrication is versatile and suitable for integrated photonic circuit power monitoring.