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Asymmetric Magnetization Switching and All-Electric Field-Free Programmable Spin Logic Enabled by the Interlayer
Guocai Wang1, Lei Guo1, Hua Su1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
Interlayer Dzyaloshinskii-Moriya interaction (DMI) enables field-free magnetization switching in CoFeB/Pt/CoFe/Pt systems. This breakthrough facilitates the development of energy-efficient, all-electric logic gates and memory devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Interfacial Dzyaloshinskii-Moriya interaction (DMI) is key for creating non-trivial spin textures in 2D spintronic devices.
- Interlayer DMI in multilayer films offers new possibilities for chiral effects in 3D spin structures.
- This DMI is crucial for advancing fast and energy-efficient spintronic applications.
Purpose of the Study:
- To investigate asymmetric current-driven field-free magnetization switching in an orthogonal CoFeB/Pt/CoFe/Pt system.
- To explore the role of interlayer DMI in achieving efficient field-free switching.
- To demonstrate the application of this phenomenon in all-electric programmable logic gates.
Main Methods:
- Fabrication and characterization of CoFeB/Pt/CoFe/Pt multilayer structures.
- Experimental observation and analysis of current-driven magnetization switching.
- Tilt angle measurements to verify the underlying physical mechanisms.
Main Results:
- Observation of unique asymmetric field-free magnetization switching.
- Achieved a high field-free switching ratio of nearly 90%.
- Confirmed that interlayer DMI and canted magnetization are responsible for the field-free switching.
Conclusions:
- The CoFeB/Pt/CoFe/Pt system exhibits efficient field-free switching due to interlayer DMI.
- This phenomenon enables the implementation of three all-electric programmable logic gates.
- The research lays the groundwork for low-power, high-speed, all-electric logic and memory devices.
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