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Asymmetric Magnetization Switching and All-Electric Field-Free Programmable Spin Logic Enabled by the Interlayer
Guocai Wang1, Lei Guo1, Hua Su1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
Abstract:
The exceptional property of the interfacial Dzyaloshinskii-Moriya interaction (DMI) is an important way to develop topologically nontrivial spin textures in two-dimensional (2D) configurations. It is of great significance for the future development of fast and energy-efficient spintronic devices. Recent pioneering works have discovered the existence of interlayer DMI in multilayer films composed of two ferromagnets separated by a nonmagnetic spacer. This effect has created an exciting opportunity for the development and application of chiral effects in three-dimensional (3D) spin structures, which could become a critical component of future multilayer spintronic devices. Here, a unique asymmetric current-driven field-free magnetization switching is observed in an orthogonal magnetization system, CoFeB/Pt/CoFe/Pt. The reason for the asymmetry is attributed to the existence of interlayer DMI. Furthermore, this structure achieves an exceptional field-free switching ratio of nearly 90%. It has been verified through tilt angle measurements that the field-free switching in this system is primarily determined by the coexistence of an antisymmetric interaction, interlayer DMI, and canted magnetization. In addition, three all-electric programmable logic gates are successfully implemented by employing this asymmetric switching behavior. This research establishes a foundation for the development of logic gates and memory devices that operate fast, with low power consumption, and are all-electric controlled.
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