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Updated: May 9, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al2O3 Interface
Zhou Jiang1, Zhaoji Huang1, Qing Liang1
1Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Electron Microscopy Center, International Center of Future Science, Changbaishan Laboratory, Jilin University, Changchun 130012, China.
Abstract:
Interfaces often exhibit a variety of unusual physical phenomena. The highly complex atomic arrangements exist at interfaces that crucially affect the properties of a material; however, atom-by-atom pinpointing the structural features always presents a significant challenge. Herein we employed a combination of electron microscopy, calculations, and simulations to investigate the atomic-level structural characteristic of the well-known Al-O-N interface in a large lattice mismatch system. We observed a reconstructed atom layer mediated by Al atoms via aberration-corrected scanning transmission electron microscopy. The presence of Al-O and Al-N chemical bonds was identified at the interfacial region via electron energy loss spectroscopy. Consistent with the result of first-principles calculations, we unambiguously clarified the ratio 1:2 of O/N atoms at the interface, and the reduction in the band gap was primarily attributed to the weakening of Al-O bonds. Our findings provide a vivid case to deepen our understanding of complex interfaces.

