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Updated: May 9, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Control of electrical properties in solution-processed ATO thin-film transistors through gallium doping

Bu Kyeong Hwang1, Ji Hyang An1, Bo Ram Lee1

  • 1Nano Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology (KICET) Jinju 52851 Republic of Korea soowon.heo@kicet.re.kr.

RSC Advances
|April 29, 2025
PubMed

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