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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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MOSFET01:16

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Updated: May 16, 2025

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Hall Effect Modulation via Ionic Gating in Degenerate Oxide Semiconductors.

Won Hyung Lee1,2, Junghyup Han3,4, Huding Jin5

  • 1Program in Nanoscience and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 08826, Republic of Korea.

ACS Applied Materials & Interfaces
|April 29, 2025
PubMed
Summary

Ionic gating enables unconventional Hall response in indium-tin oxide, shifting it from metallic to semiconducting. This breakthrough allows detailed study of degenerate semiconductors and their electronic applications.

Keywords:
Hall effectcarrier concentrationdegenerate semiconductorindium−tin-oxideion adsorptionionic gating effectwater-in-salt electrolyte

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Semiconductor Physics

Background:

  • Hall measurements are crucial for semiconductor characterization but face limitations with highly conductive materials.
  • Degenerate semiconductors and traditional gating methods present challenges in modulating carrier density.
  • Electric field screening effects obscure carrier behavior in high electron density materials.

Purpose of the Study:

  • To investigate ionic gating effects in degenerate semiconductors.
  • To demonstrate an unconventional Hall response in indium-tin oxide using water-in-salt electrolytes.
  • To enable the observation of a metallic-to-semiconducting transition via ionic gating.

Main Methods:

  • Utilized water-in-salt electrolyte-mediated ionic gating.
  • Performed in situ Hall measurements to analyze carrier behavior.
  • Quantitatively analyzed charge modulation patterns and energy band structure modifications.

Main Results:

  • Observed an unconventional Hall response in indium-tin oxide.
  • Demonstrated a metallic-to-semiconducting shift induced by ionic gating.
  • Quantified charge modulation leading to significant energy band structure changes.

Conclusions:

  • Ionic gating provides a novel framework for studying degenerate semiconductors.
  • This method overcomes limitations of traditional Hall measurements and gating techniques.
  • Facilitates advanced characterization of emerging semiconductor materials for electronic devices.