Metal-Semiconductor Junctions
Biasing of Metal-Semiconductor Junctions
Overview of Cell-Matrix Interactions
Anchoring Junctions
Electrostatic Boundary Conditions in Dielectrics
P-N junction
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Updated: May 21, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Yuhao Zhao1, Maëlle Kapfer2, Megan Eisele2
1Institute for Theoretical Physics, ETH Zurich, Zurich 8093, Switzerland.
Metal contacts on graphene create a localized n-doped cavity, influencing electronic transport and revealing topological edge states. This finding is crucial for advancing graphene nanoelectronic devices.
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