Optoelectronic synapses realized on large-scale continuous MoSe₂ with Te doping induced tunable memory functions.

Area of Science:

• Materials Science
• Nanotechnology
• Neuroscience

Background:

• Von Neumann architecture faces limitations ('memory wall').
• Artificial synapses are key for neuromorphic computing.
• 2D semiconductors offer excellent electronic and optoelectronic properties for synaptic devices.

Purpose of the Study:

• To create robust optoelectronic synapses on wafer-scale MoSe2.
• To engineer tunable memory functions using Te doping and Se vacancies.
• To demonstrate synaptic behaviors and in-sensor computation capabilities.

Main Methods:

• Wafer-scale MoSe2 film growth via chemical vapor deposition.
• Te doping to induce Se vacancies for defect engineering.
• Fabrication of arrayed optoelectronic devices using ultra-high vacuum stencil lithography.

Main Results:

• Demonstrated tunable memory functions in MoSe2-based optoelectronic synapses.
• Observed significant paired-pulse facilitation (up to 197%) under UV illumination.
• Showcased spike-dependent plasticity and hardware image sharpening.

Conclusions:

• Vacancy engineering in 2D semiconductors is a viable strategy for neuromorphic devices.
• Te-doped MoSe2 synapses exhibit promising performance for future integrated systems.
• This work advances the development of efficient artificial synaptic devices.