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Updated: May 22, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Novel mixed topological state in monolayer MnSbO3
Yanzhao Wu1, Li Deng1, Junwei Tong2
1Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang, 110819, China. zhangxm@atm.neu.edu.cn.
Abstract:
An important goal of modern condensed-matter physics involves the search for new states of matter with emergent properties and desirable functionalities. In this study, based on symmetry analysis and first-principles calculations, the ferromagnetic monolayer MnSbO3 was proven to be a quantum anomalous Hall effect (QAH) insulator with a tunable topological state. As the magnetization direction varies in the xy plane, monolayer MnSbO3 transforms between a QAH insulator with a Chern number C = 1, topological trivial half metal and a QAH insulator with the Chern number C = -1 with a period of 60°. As the magnetization direction is located in the xz plane, the Chern number of the monolayer MnSbO3 changes between C = ±3 and C = ±1, thereby realizing the regulation of the topological phase. Interestingly, a mixed QAH effect and trivial half-metal topological state occur at the topological phase transition point between two QAH effects. As a result, a mixed topological state was achieved in monolayer MnSbO3 by regulating the magnetization direction.
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