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Updated: May 12, 2025
Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
Published on: August 15, 2015
High Capacitance Density and Thermal Stability in Strontium
Yilong Feng1, Zhenya Lu1, Ming Lv1
1School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China.
Abstract:
Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of -55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications.
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