Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Transport01:21

Carrier Transport

351
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
351
P-N junction01:11

P-N junction

406
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
406
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

176
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
176
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

248
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
248

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Effect of Florpyrauxifen-Benzyl on Methane-Metabolizing Microbial Community in Rice Rhizosphere Soil.

Microorganisms·2026
Same author

Extended transformation optics in anisotropic photonic devices: theory, design, and demonstrations.

Optics express·2026
Same author

Imaging quantum chemistry in action with quantum attomicroscopy.

Communications chemistry·2026
Same author

Time-Resolved Laser-Induced Ring-Opening and Dissociation Dynamics in Bromothiophene Isomers.

Journal of the American Chemical Society·2026
Same author

Compact 1 × 3 thin-film lithium niobate optical switch driven by a single radio frequency source.

Optics letters·2026
Same author

Multi-target and ultra-high-speed optical wireless communication using a thin-film lithium niobate optical phased array.

Nature communications·2025
Same journal

Demonstration of a quantum C-NOT gate in a time-multiplexed fully reconfigurable photonic processor.

Nature communications·2026
Same journal

Nonlinear quantum light source with van der Waals ferroelectric NbOX<sub>2</sub> (X = Br, I).

Nature communications·2026
Same journal

Antagonistic histone H2A variants and autonomous heterochromatin formation shape epigenomic patterns in Arabidopsis.

Nature communications·2026
Same journal

The long tail of nitrate pollution in groundwater challenges governance of global water quality.

Nature communications·2026
Same journal

Select microbial metabolites promote tau aggregation in a murine tauopathy model.

Nature communications·2026
Same journal

Warming climate has lengthened global intense tropical cyclone seasons.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: May 13, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Light-induced quantum tunnelling current in graphene.

Mohamed Sennary1, Jalil Shah1, Mingrui Yuan1,2

  • 1Department of Physics, University of Arizona, Tucson, AZ, USA.

Nature Communications
|May 9, 2025
PubMed
Summary
This summary is machine-generated.

Researchers generated light-induced quantum tunnelling currents in graphene phototransistors using ultrafast laser pulses. This demonstrated an attosecond-scale current switching effect, paving the way for petahertz optical transistors and lightwave electronics.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.5K

Related Experiment Videos

Last Updated: May 13, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.5K

Area of Science:

  • Condensed matter physics
  • Quantum electronics
  • Optoelectronics

Background:

  • Advancements in attosecond spectroscopy enable study of electron dynamics using ultrafast light fields.
  • Ultrafast optoelectronic devices offer potential for high-speed electronics.

Purpose of the Study:

  • To generate and characterize light-induced quantum tunnelling currents in graphene phototransistors.
  • To demonstrate ultrafast current switching and logic gate operations.

Main Methods:

  • Utilized ultrafast laser pulses to induce quantum tunnelling in graphene phototransistors.
  • Controlled photoexcited charge carrier density to tune conductivity and current.
  • Operated devices in an ambient environment.

Main Results:

  • Achieved light-induced quantum tunnelling currents in graphene phototransistors.
  • Demonstrated an instantaneous field-driven current with ON/OFF switching on a ~630 attosecond scale (~1.6 petahertz speed).
  • Showcased tunability of tunnelling current and enhanced conductivity via laser power control, enabling logic gate demonstrations.

Conclusions:

  • The reported approach enables petahertz-speed current switching in graphene phototransistors under ambient conditions.
  • This method is suitable for developing next-generation petahertz optical transistors, lightwave electronics, and optical quantum computers.