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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Updated: May 21, 2025

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Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics.

Mohamed Soliman1, Cédric Marchand2, Aymen Mahmoudi3

  • 1Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.

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Summary
This summary is machine-generated.

This study introduces a novel van der Waals device for advanced electronics. It enables efficient logic and memory operations, paving the way for next-generation artificial intelligence hardware.

Keywords:
artificial intelligencefloating gateneuronsynapsevan der Waals materials

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Traditional semiconductor technologies face limitations in scalability and power efficiency.
  • The development of novel materials and device architectures is crucial for advancing computing paradigms.
  • Van der Waals (vdW) materials offer unique electronic properties suitable for next-generation devices.

Purpose of the Study:

  • To introduce and demonstrate an inverted floating gate device architecture using all-van-der-Waals technology.
  • To explore the potential of this device for both logic and neuromorphic circuits.
  • To highlight its capabilities in in-memory computing and artificial neural networks.

Main Methods:

  • Fabrication of an inverted floating gate device with a polymorphic multilayer graphene floating gate and a ReS2 semiconductor channel.
  • Characterization of electrostatic coupling and dynamic conductance tuning.
  • Implementation and simulation of logic gates, synaptic plasticity emulation, and spiking neuron circuits.

Main Results:

  • The device architecture demonstrates efficient electrostatic coupling and dynamic conductance tuning.
  • Non-volatile logic gates for in-memory computing were successfully implemented.
  • Accurate emulation of synaptic plasticity (92% accuracy) and versatile spiking neuron circuits were achieved.
  • The device shows promise as a building block for artificial intelligence hardware.

Conclusions:

  • Hybrid integration of van der Waals materials offers a promising solution to overcome limitations of traditional semiconductor technologies.
  • The demonstrated device architecture is a versatile platform for next-generation logic, memory, and neuromorphic computing.
  • This work paves the way for advanced artificial intelligence electronics and future computing paradigms.