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Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics
Mohamed Soliman1, Cédric Marchand2, Aymen Mahmoudi3
1Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, Strasbourg 67034, France.
Abstract:
An inverted floating gate device architecture is introduced, demonstrated with all-van-der-Waals technology, targeting both logic and neuromorphic circuits. Integrating a top polymorphic multilayer graphene floating gate improves the electrostatic coupling to the ReS2 semiconductor channel by facilitating efficient dynamic conductance tuning and enabling dual-mode reconfigurable logic and memory operations. The non-volatile capability is used to implement compact logic gates for in-memory computing. The device is also shown to emulate synaptic plasticity, with an accuracy of 92% demonstrated in simple artificial neural network simulations. Moreover, spiking neuron circuits for neural networks through a five-transistor design makes it a versatile building block for artificial intelligence electronics. These findings demonstrate the potential of hybrid integration of van der Waals materials to address the limitations of traditional semiconductor technologies and become key to developments of next-generation electronics.
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