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Updated: May 2, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Published on: June 23, 2018

High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers.

Guohao Yang^1,2,3, Tianhong Liu^1,2,3, Jinping Li^1,2

¹Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences, Changchun 130033, China.

Sensors (Basel, Switzerland)

|May 14, 2025

Summary

This summary is machine-generated.

This study developed a high-speed photodiode using InGaAs and InAlAs for broadband sensing from 850-1550 nm. The novel design enhances sensitivity and speed for advanced optical detection and communication.

Keywords:

InGaAs/InP broadband graded bandgap layer photodiode

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Area of Science:

Optoelectronics
Semiconductor Device Physics

Background:

Photodiodes are crucial for optical detection, but broadband performance and high-speed response remain challenging.
Existing designs often face limitations in sensitivity at shorter wavelengths and signal integrity at high frequencies.

Purpose of the Study:

To develop a high-speed, broadband photodiode for optical sensing and detection.
To enhance device sensitivity, responsivity, and reliability across the 850-1550 nm wavelength range.

Main Methods:

Fabrication of an InGaAs/InP photodiode utilizing an InAlAs window layer.
Incorporation of InGaAsP graded bandgap layers (GBLs) to minimize defect-related losses.
Material substitution of GaAs with InGaAs to improve performance metrics.

Main Results:

Achieved high bandwidths of 20 GHz (850 nm), 15 GHz (1310 nm), and 15.5 GHz (1550 nm).
Demonstrated responsivities of 0.5 A/W (850 nm), 0.72 A/W (1310 nm), and 0.64 A/W (1550 nm).
Significantly improved sensitivity at 850 nm due to the InAlAs window layer.

Conclusions:

The developed photodiode offers superior performance for multi-wavelength optical sensing.
The device is suitable for high-speed optical communication platforms and broadband photonic sensors.
Material engineering strategies effectively enhanced photodiode sensitivity, speed, and reliability.