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Updated: May 16, 2025

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
Published on: January 4, 2016
Investigations on the dissolution behavior of silicon in aqueous HF-HClO4-mixtures
Ann-Lucia Neumann1,2, André Stapf1, Nils Schubert1
1Technische Universität Bergakademie Freiberg, Department of Chemistry, Physics and Biosciences, Institute of Inorganic Chemistry Leipziger Str. 29 D-09599 Freiberg Germany Edwin.Kroke@chemie.tu-freiberg.de.
Abstract:
Wet chemical etching processes are an essential part of silicon treatment in the photovoltaic and semiconductor industry. A commonly used system is HF-HNO3. In order to avoid NO -formation, silicon can also be etched with HF-(HCl)-Cl2-mixtures. Thorough investigations into perchloric acid indicate that even Si-H terminated surfaces are inert against this very strong oxidizing agent.
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