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Updated: Aug 1, 2026
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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
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Single tin-vacancy center in nanoscale diamond
Masanori Fujiwara1, Masanao Ohori1, Frederick Tze Kit So1,2
1Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
Discover Nano
|May 14, 2025
Summary
Researchers successfully created tin-vacancy (SnV) centers in detonation nanodiamonds (DNDs). These SnV centers in DNDs show promise for quantum networks and biological sensing applications.
Area of Science:
- Materials Science
- Quantum Physics
- Nanotechnology
Background:
- Group-IV color centers in diamond are key for quantum networks and biological sensing.
- Detonation nanodiamonds (DNDs) offer potential for noninvasive cellular sensing.
- Previous work established silicon- and germanium-vacancy centers in DNDs.
Purpose of the Study:
- Investigate the generation of tin-vacancy (SnV) centers in detonation nanodiamonds (DNDs).
- Explore the potential of SnV centers in DNDs for quantum and sensing applications.
- Address challenges in creating SnV centers in ultrasmall nanodiamonds due to strain.
Main Methods:
- Subjecting tin-doped DNDs (approx. 5 nm) to a 3-day boiling acid treatment.
- Analyzing photoluminescence spectra to identify SnV center signatures.
- Conducting photon autocorrelation measurements to confirm single SnV centers.
Main Results:
- Achieved sharp zero-phonon lines for SnV centers around 620 nm.
- Demonstrated the presence of single SnV centers within the DNDs.
- SnV centers exhibit strong photoluminescence and long spin coherence times.
Conclusions:
- Successful generation of SnV centers in ultrasmall DNDs is feasible.
- SnV centers in DNDs are promising for quantum applications and biological temperature/structural sensing.
- The developed method overcomes strain challenges for SnV center creation in nanodiamonds.
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