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Updated: Jun 12, 2025
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Atomic layer deposition of Ru in nanoTSV with high coverage and low resistivity
Zhao Chen1,2, Feifeng Huang1,2, Biao Wang1,2
1College of Mechanical and Vehicle Engineering, Hunan University Changsha 410082 People's Republic of China fengbo36@hnu.edu.cn.
Abstract:
With the advancement of Moore's Law, the metal linewidth has gradually reduced and Cu interconnection has lost its advantages. This paper explores the advantage of ruthenium (Ru) as a next-generation interconnection material. An Ru film with a resistivity of 15 μΩ cm and roughness of 0.8 nm was fabricated via atomic layer deposition (ALD) using the metal-organic precursor (bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2]) and oxygen as the reactant. Excellent step coverage and filling in nanoTSV arrays with a critical dimension (CD) of 30 nm and an aspect ratio (AR) of approximately 15 demonstrate that the reported process is highly promising for fabricating Ru as a replacement for Cu interconnects in advanced integrated circuits (ICs).
