Related Experiment Video
Updated: Jun 9, 2026
09:38
Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
12.8K
Mid-infrared group IV nanowire laser
Youngmin Kim1, Simone Assali2, Junyu Ge3
1School of Materials Science and Engineering, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Republic of Korea.
Science Advances
|May 16, 2025
Summary
Researchers achieved lasing above 2 μm from a single Germanium-Tin (GeSn) nanowire. This breakthrough enables cost-effective, Si-compatible mid-infrared lasers for integrated photonics.
Area of Science:
- Materials Science
- Photonics
- Nanotechnology
Background:
- Semiconductor nanowires are key for ultracompact lasers in integrated photonics.
- Integrating III-V and II-VI nanowire lasers with Si photonics is challenging.
- Group IV GeSn nanowires offer Si-compatible, cost-effective gain media for mid-infrared lasers.
Purpose of the Study:
- To demonstrate lasing from a single GeSn nanowire above 2 μm.
- To overcome integration challenges in Si photonics platforms.
- To enable all-group IV mid-infrared photonic-integrated circuits.
Main Methods:
- Experimental observation of lasing from a single bottom-up grown GeSn nanowire.
- Utilizing strain engineering to enhance material gain.
- Employing optimized cavity designs to minimize optical losses.
Main Results:
- Successful demonstration of lasing above 2 μm from a single GeSn nanowire.
- Achieved amplified material gain exceeding minimized optical losses.
- Observed single-mode lasing with an ultralow threshold of ~5.3 kW/cm².
Conclusions:
- This work demonstrates the potential of GeSn nanowires for Si-compatible lasers.
- The findings pave the way for mid-infrared photonic-integrated circuits.
- Enables on-chip classical and quantum applications using group IV materials.
