Proximity effect correction in electron beam lithography using a composite function model of electron scattering...

Area of Science:

• Materials Science and Nanotechnology
• Physics

Background:

• Electron beam lithography (EBL) is crucial for high-resolution patterning.
• Electron scattering causes proximity effects, limiting EBL resolution.
• Current proximity effect correction (PEC) methods struggle with accuracy and computational cost.

Purpose of the Study:

• To develop a novel, computationally efficient, and accurate method for proximity effect correction in EBL.
• To improve the calculation of the point spread function (PSF) for electron scattering.

Main Methods:

• A composite PSF model combining a power function (forward scattering) and a Gaussian function (backscattering) was developed.
• The model was validated using the BEAMER software for PEC.
• Performance was compared against Monte Carlo and double Gaussian models.

Main Results:

• The composite model achieved high accuracy in PSF calculation.
• PEC using the composite model successfully patterned a 30 nm outer ring width hydrogen silsesquioxane (HSQ) zone plate.
• The model demonstrated superior correction performance compared to traditional methods.

Conclusions:

• The composite PSF model offers a balance of accuracy and computational efficiency for PEC.
• This approach is suitable for high-resolution EBL and complex nanostructures like meta-surfaces and meta-lenses.