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Published on: September 12, 2018
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An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect
Yu-Wei Chen1, Tung-Yuan Yu2, Chun-Wei Huang3
1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan.
Summary
Ferroelectric imprint challenges are overcome by tuning electrode work functions. Optimizing electrode materials like LSMO and SrRuO3 enhances device stability and reliability for low-voltage electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Ferroelectric imprint, an asymmetric polarization switching, hinders ultra-low-voltage device reliability.
- Key devices affected include MagnetoElectric Spin-Orbit devices, Ferroelectric Random-Access Memory, Ferroelectric Field-Effect Transistors, and Ferroelectric Tunnel Junctions.
Purpose of the Study:
- To investigate the impact of electrode configuration on ferroelectric imprint.
- To demonstrate control over built-in voltage offset (Voffset) by tuning electrode work functions.
- To optimize ferroelectric device architecture for improved reliability.
Main Methods:
- Systematic investigation of electrode configurations in various device architectures.
- Tuning the work function of La0.7Sr0.3MnO3 (LSMO) electrodes via oxygen pressure during deposition.
- Fabrication and characterization of ferroelectric capacitors and optimized hybrid electrode devices.
Main Results:
- Higher oxygen pressures during LSMO deposition increase work function, compensating for Voffset.
- An optimized hybrid electrode device (LSMO/SrRuO3) showed a low coercive voltage (0.3 V) and minimal Voffset (0.06 V).
- The optimized device achieved high endurance (10^9 cycles) and robust zero-bias polarization retention.
Conclusions:
- Electrode work function tuning is a viable strategy to mitigate ferroelectric imprint.
- Practical guidelines for electrode design are provided to enhance ferroelectric device reliability.
- This approach advances the development of stable and high-performance ultra-low-power ferroelectric electronics.

