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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Bandgap-Tunable Halide Perovskite Quantum Dots Enabled by Femtosecond Laser Patterning for Full-Color and
Yujie Cheng1, Cuilu Xi1, Denghao Li1
1College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China.
Abstract:
Perovskite quantum dots (PQDs) have garnered significant attention for their exceptional optoelectronic properties, yet achieving precise luminescence control often involves complex chemical processes, and traditional display technologies face material and environmental limitations. In this study, we present an innovative approach utilizing three distinct halide perovskite quantum dot solutions to achieve tunable emission properties without additional chemical modifications. By employing femtosecond laser patterning, we successfully fabricated high-resolution (1.5 μm spacing), full-color (410-710 nm) quantum dot patterns with excellent environmental stability. This method eliminates the need for excessive chemical reagents and intricate masking steps, significantly streamlining the fabrication process and enhancing efficiency. Our findings highlight the potential of combining bandgap engineering with advanced patterning techniques, offering a practical foundation for green synthesis and simplified manufacturing processes in next-generation display technologies.
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