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Anisotropic ultrafast hot carrier dynamics of two-dimensional SnS single crystals
Zanxiong Peng1, Borong Cong1, Jiajun Cao2
1State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China. wzliang@gxu.edu.cn.
Abstract:
In this paper, we investigated the temperature-dependent and anisotropic ultrafast hot carrier decay dynamics of two-dimensional SnS single crystals using femtosecond transient optical spectroscopy. The photo-excited hot carriers in SnS are relaxed via a fast decay (τ1) and a slow decay (τ2), which are contributed by the electron-phonon interactions coupling with high frequency and low frequency optical phonons of SnS, respectively. Both the τ1 and τ2 decay times show anisotropy. In the ab-plane, both τ1 and τ2 decays have a faster relaxion time in the b-axis direction than in the a-axis direction, which is due to the crystal anisotropy of SnS. The crystal anisotropy of SnS gives rise to more phonon vibrations in the b-axis direction than in the a-axis direction, which leads to stronger electron-phonon coupling along the b-axis direction and manifests as a shorter decay time along the b-axis direction. For the τ2 decay process, the femtosecond laser pump induces different dielectric responses in the ab-plane. In the b-axis direction, the pump laser induces a reduction in the dielectric coefficient (Δε < 0), while it induces an increase in the dielectric coefficient (Δε > 0) in the a-axis.
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