Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Atomic Nuclei: Types of Nuclear Relaxation01:28

Atomic Nuclei: Types of Nuclear Relaxation

399
Nuclear relaxation restores the equilibrium population imbalance and can occur via spin–lattice or spin–spin mechanisms, which are first-order exponential decay processes.
In spin–lattice or longitudinal relaxation, the excited spins exchange energy with the surrounding lattice as they return to the lower energy level. Among several mechanisms that contribute to spin–lattice relaxation, magnetic dipolar interactions are significant. Here, the excited nucleus transfers...
399
Atomic Nuclei: Nuclear Relaxation Processes01:23

Atomic Nuclei: Nuclear Relaxation Processes

729
In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis,  the precessing magnetic moments are randomly oriented around the z-axis.
729
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

345
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
345

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Nanoscale Compositional and Strain Gradients Enable High-Speed and Amplitude-Resolved Pyroelectric Sensing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Mg-integrated octopus-inspired hydrogel dressing enables autonomous adhesion and wound closure for enhanced healing via sequential microenvironment regulation.

Biomaterials·2026
Same author

Targeted DNA triplex-forming oligonucleotide liposome for pulmonary fibrosis gene therapy.

Cell reports. Medicine·2026
Same author

Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al<sub>0.8</sub>Sc<sub>0.2</sub>N/HfO<sub>2</sub> Ferroelectric Diodes.

Micromachines·2026
Same author

Relaxor behavior in rocksalt cation-ordered material induced by (anti)ferroelectric phase competition.

Nature communications·2026
Same author

Countering postoperative immune suppression with a self-assembling dendritic cell nanovaccine.

Bioactive materials·2026
Same journal

Design Principles for Fluid Molecular Ferroelectrics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Generating Unconventional Spin-Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

An In Situ H<sub>2</sub>S-Activated Plasmonic Nanozyme for Near-Infrared II Photo-Thermoelectric Catalytic Therapy.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

A Recyclable and Sustainable Hydroxypropyl Methylcellulose Electrolyte for Electrochromic Devices.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Perovskite Heterostructures for Optoelectronic Applications.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Sep 20, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.2K

Highly Tunable Relaxors Developed from Antiferroelectrics.

Hao Pan1, Liyan Wu2, John Carroll3,4

  • 1Department of Materials Science and Engineering, University of California, Berkeley, California, 94720, USA.

Advanced Materials (Deerfield Beach, Fla.)
|May 29, 2025
PubMed
Summary
This summary is machine-generated.

New relaxor materials derived from antiferroelectrics offer ultrahigh dielectric response and voltage tunability, crucial for advanced microwave-telecommunication electronics applications.

Keywords:
antiferroelectricdielectric tunabilitylead zirconateradio frequencyrelaxorthin film

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

8.9K

Related Experiment Videos

Last Updated: Sep 20, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.2K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

8.9K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Dielectric Materials

Background:

  • Highly responsive, voltage-tunable dielectrics are critical for microwave-telecommunication electronics.
  • Ferroelectric and relaxor materials are key candidates, showing agile dielectric responses.

Purpose of the Study:

  • To demonstrate that relaxor materials derived from antiferroelectrics can achieve ultrahigh dielectric response and tunability.
  • To explore the phase evolution and dielectric properties of Pb1-xBaxZrO3 alloys.

Main Methods:

  • Alloying archetypal antiferroelectric PbZrO3 with dielectric BaZrO3.
  • Investigating the phase competition between antiferroelectric, ferroelectric, and paraelectric orders.
  • Characterizing dielectric tunability and commutation quality factor across various compositions and frequencies.

Main Results:

  • Pb0.65Ba0.35ZrO3 exhibits exceptional dielectric tunability (≈91% at 500 kV cm-1) at 10 kHz.
  • High tunability is maintained in the radio-frequency range with a commutation quality factor >2000 at 1 GHz.
  • An unconventional multi-phase competition enhances local heterogeneities, leading to relaxor characteristics.

Conclusions:

  • Relaxor materials developed from antiferroelectrics offer superior dielectric response and tunability compared to traditional relaxor ferroelectrics.
  • This approach provides a promising route for developing advanced dielectric materials with enhanced functional capabilities.
  • The study highlights a phase evolution from antiferroelectrics to relaxors, enabling higher negative dielectric tunability.