Related Experiment Video

Updated: Jun 27, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al0.8Sc0.2N/HfO2

Jong Min Park1, Hyeong Jun Joo1, Yoojin Lim1

  • 1Department of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.

Micromachines
|June 26, 2026
PubMed
Abstract

Keywords:
AlScNferroelectric diodeinterfacialmetal–insulator–ferroelectric-metaloxygen substitutional defect

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