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Si-Cl2-Ar+ Atomic Layer Etching Window: A Fundamental Study Using Molecular Dynamics Simulations and a Reduced Order

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  • 1TEL Technology Center, America, LLC, Albany, New York 12203, United States.

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This study reveals a narrow atomic layer etching (ALE) window for silicon using chlorine and argon ions, crucial for precise semiconductor fabrication. Understanding this window optimizes etching processes for advanced microelectronics.

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Area of Science:

  • Materials Science
  • Surface Science
  • Plasma Physics

Background:

  • Silicon atomic layer etching (ALE) is critical for microelectronics fabrication.
  • Contradictory experimental results exist regarding the ALE window for Si-Cl2-Ar+ systems.
  • Understanding the ALE window is essential for process control and optimization.

Purpose of the Study:

  • To investigate the properties of the ALE window for silicon etching using Cl2 and Ar+.
  • To elucidate the ion energy range defining the ALE window.
  • To resolve discrepancies in experimental findings regarding the ALE window.

Main Methods:

  • Molecular dynamics (MD) simulations were employed to model the etching process.
  • A reduced order model (ROM) was developed and utilized for analysis.
  • The study analyzed the interplay between ion energy, chemical reactions, and physical sputtering.

Main Results:

  • Both MD simulations and the ROM identified a narrow ALE window between approximately 15 and 20 eV for normal incidence Ar+ ions.
  • The etch yield per cycle was found to be less than one atomic layer.
  • Modifications to the ROM, specifically altering the physical sputtering threshold, demonstrated an expansion of the ALE window, highlighting the significance of sputtering thresholds.

Conclusions:

  • The Si-Cl2-Ar+ ALE system exhibits a narrow ALE window, primarily influenced by the balance of chemical and physical sputtering.
  • The findings provide a theoretical basis for understanding and controlling silicon ALE processes.
  • Further research using the ROM can explore dependencies on ion fluence and other process parameters.